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portada Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
Type
Physical Book
Publisher
Author
Language
English
Pages
355
Format
Paperback
Dimensions
23.4 x 15.6 x 2.0 cm
Weight
0.52 kg.
ISBN13
9789401784726
Categories

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

O'donnell, Kevin Peter ; Dierolf, Volkmar (Author) · Springer · Paperback

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications - O'Donnell, Kevin Peter ; Dierolf, Volkmar

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Synopsis "Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications"

1.Introduction and overview. Kevin O'DONNELL, Strathclyde, UK. 2.Theoretical background. Robert JONES, Exeter and Benjamin HOURAHINE, Strathclyde, UK. 3.In-situ doping of MBE III-N: RE epilayers. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 4.RE implantation and annealing of III-Nitrides. Katharina LORENZ and Eduardo ALVEZ, ITN Lisbon, Portugal. 5.Lattice location studies of RE impurities in III-Nitrides. Andre VANTOMME, IKS Leuven, Belgium. 6.Microscopic characterisation of luminescent III-N: RE epilayers. Robert MARTIN, Strathclyde, UK 7.High-resolution optical studies of site multiplicity in III-N: RE. Volkmar DIEROLF, Lehigh, USA. 8.RE-doped III-N quantum dots. Bruno DAUDIN, Grenoble, France. 9.Excitation model for RE ions in solids. Alain BRAUD and Pierre RUTERANA, Caen, France. 10.III-N: RE electroluminescence. Andrew STECKL and John ZAVADA, Nanolab Cincinatti, USA. 11.RE-doped III-N for spintronics applications. Oliver BRANDT, PDI Berlin, Germany. 12.Summary and prospects for future work. Kevin O'DONNELL, Strathclyde, UK

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