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portada Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition
Type
Physical Book
Publisher
Author
Language
English
Pages
643
Format
Paperback
ISBN13
9780367655808
Edition No.
2

Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition

John E. Ayers; Tedi Kujofsa; Paul Rago; Johanna Raphael (Author) · Crc Press · Paperback

Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition - John E. Ayers; Tedi Kujofsa; Paul Rago; Johanna Raphael

New Book Imported to New Zealand
Delivery: 08 Jul - 15 Jul Shipping: 4 to 5 business days.
NZ$ 432.52
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NZ$ 432.52

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Synopsis "Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition "

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

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